G. Lambert

Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si

S. Zemon, S. Shastry, P. Norris et al. · Solid State Communications · 1986 · 120 citations

Photonics, Electrical Engineering, Photoluminescence +7

Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium source

P. Norris, John Black, S. Zemon et al. · Journal of Crystal Growth · 1984 · 47 citations

Materials Science, Engineering, Gaas/gaalas Heterostructures +5

Characterization of Er3+-doped glasses by fluorescence line narrowing

S. Zemon, G. Lambert, L. J. Andrews et al. · Journal of Applied Physics · 1991 · 42 citations

Homogeneous Broadening, Optical Materials, Engineering +16

Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy

S. Shastry, S. Zemon, D.G. Kenneson et al. · Applied Physics Letters · 1988 · 40 citations

Materials Science, Semiconductors, Electrical Engineering +14

<title>Excited state cross sections for Er-doped glasses</title>

S. Zemon, G. Lambert, W. J. Miniscalco et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1991 · 30 citations

Engineering, Esa Cross Sections, Comparison Esa +11