Dan Sandström

W-Band CMOS Amplifiers Achieving $+$10 dBm Saturated Output Power and 7.5 dB NF

Dan Sandström, Mikko Varonen, Mikko Kärkkäinen et al. · IEEE Journal of Solid-State Circuits · 2009 · 61 citations

Microwave Circuits, Electrical Engineering, Chip Size +12

A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio

Dan Sandström, Mikko Varonen, Mikko Kärkkäinen et al. · 2010 · 30 citations

W-band 65Nm, Image Rejection Ratio, High-frequency Device +8

94GHz power-combining power amplifier with +13dBm saturated output power in 65nm CMOS

Dan Sandström, Baudouin Martineau, Mikko Varonen et al. · 2011 · 28 citations

Transformer-based Matching Elements, Electrical Engineering, Engineering +7

A digitally controlled mems gyroscope with 3.2 DEG/HR stability

H. Rodiegard, Dan Sandström, P. Pelin et al. · 2005 · 23 citations

Digital Feedback Loops, Engineering, Mechatronic System +14

A 100-GHz balanced FET frequency doubler in 65-nm CMOS

Mikko Varonen, Mikko Kärkkäinen, Dan Sandström et al. · European Microwave Integrated Circuit Conference · 2011 · 15 citations

Electrical Engineering, Fundamental Suppression, Engineering +10