Hui Liao

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Muhammad Saddique Akbar Khan, Hui Liao, Guo Yu et al. · Materials Science in Semiconductor Processing · 2021 · 18 citations

Materials Science, Patterned Sapphire Substrate, Wide-bandgap Semiconductor +9

First-principles study of CN point defects on sidewall surface of [0 0 0 1]-oriented GaN nanowires

Hui Liao, Junchao Li, Tiantian Wei et al. · Applied Surface Science · 2018 · 12 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Room-temperature polariton lasing in GaN microrods with large Rabi splitting

Huanqing Chen, Junchao Li, Guo Yu et al. · Optics Express · 2022 · 12 citations · Full text

Pattern Selection in the Belousov−Zhabotinsky Reaction with the Addition of an Activating Reactant

Chun Xia Zhang, Hui Liao, Lu Zhou et al. · The Journal of Physical Chemistry B · 2004 · 11 citations

Belousov−zhabotinsky Reaction, Physics, Activating Reactant +6

High-quality GaN epitaxially grown on Si substrate with serpentine channels

Tiantian Wei, Hua Zong, Shengxiang Jiang et al. · Superlattices and Microstructures · 2018 · 11 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +4