J. Allam

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

D. V. Lang, M. B. Panish, Federico Capasso et al. · Applied Physics Letters · 1987 · 145 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Electrical Engineering +13

Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures

Somnath Bhattacharyya, S. J. Henley, Ernest Mendoza et al. · Nature Materials · 2005 · 112 citations

Engineering, Tunneling Microscopy, Physics +4

Ultra-broadband light trapping using nanotextured decoupled graphene multilayers

José V. Anguita, Muhammad Ahmad, Sajad Haq et al. · Science Advances · 2016 · 108 citations · Full text

New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band-edge discontinuity

Federico Capasso, J. Allam, A. Y. Cho et al. · Applied Physics Letters · 1986 · 67 citations

Categoryquantum Electronics, Wide-bandgap Semiconductor, Engineering +17

New high-speed long-wavelength Al0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche photodiodes

K. Mohammed, Federico Capasso, J. Allam et al. · Applied Physics Letters · 1985 · 49 citations

Wide-bandgap Semiconductor, Short Wavelength Optic, Engineering +16