Tetsuhiko Inazu

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Cyril Pernot, Myung‐Hee Y. Kim, Shinya Fukahori et al. · Applied Physics Express · 2010 · 261 citations

Engineering, Electrical Engineering, Materials Science +17

Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes

Cyril Pernot, Shinya Fukahori, Tetsuhiko Inazu et al. · physica status solidi (a) · 2011 · 110 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

Myung‐Hee Y. Kim, Takehiko Fujita, Shinya Fukahori et al. · Applied Physics Express · 2011 · 86 citations

Engineering, Electrical Engineering, Materials Science +17

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers

Yusuke Matsukura, Tetsuhiko Inazu, Cyril Pernot et al. · Applied Physics Express · 2021 · 59 citations

Engineering, Materials Engineering, Materials Science +16

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Tetsuhiko Inazu, Shinya Fukahori, Cyril Pernot et al. · Japanese Journal of Applied Physics · 2011 · 57 citations · Full text

Engineering, Electrical Engineering, Materials Science +16