inted films present a minimum sheet resistance of 23.3 Ω sq^-1 after annealing, and are n-type doped, with carrier concentrations in the low 10²⁰ cm^-3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm² V^-1 s^-1 for a 480 nm-thick film printed on SiO₂/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1-1. These results represent the first in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.22:T468,Abstract 1/ f noise represents the dominant source of noise in the low‐frequency range in several physical systems, including field‐effect transistors. Its investigation can provide very important information on the fabrication process, highlighting the steps that are more prone to the introduction of defects. Here, 1/ f noise in bilayer MoS 2 transistors on paper with inkjet‐printed Ag contacts and hBN dielectric is investigated. These devices are promising building blocks for future low‐cost, flexible, and easily recyclable disposable electronics. The analysis of 1/ f noise, performed following Hooge's empirical approach, results in a Hooge parameter ≈1–10, which is comparable to those reported for bilayer MoS 2 transistors on SiO 2 . The present results indicate that the noise properties of the investigated devices are stable against substrate bending and are mainly determined by the printing of the dielectric, while not being sensibly affected by the use of the paper substrate. These results are promising for the further development of low noise 2D material‐based flexible electronics on paper.23:T489,The capability to fabricate printed and flexible energy harvesting and conditioning circuits, over large area and with low-cost techniques, is crucial to enable flexible and wearable electronics. Carbon nanomaterials show excellent electrical, optical, chemical, and mechanical properties for printed electronics, offering low-cost, and large-area functionality on flexible substrates. In the past few years many efforts have been dedicated to the fabrication of printed transistors made with carbon nanomaterials, but very few works have been dedicated to diodes, which are fundamental circuit elements, often employed in energy harvesting systems. Here we report a simple and cost-effective approach for the fabrication of fully inkjet printed Schottky diodes on Kapton and paper substrates using carbon nanotubes and graphene. We demonstrate that both ohmic and Schottky contacts between printed nanotubes and graphene can be obtained with post printing thermal treatments at different temperatures. The diodes thus fabricated work with low supply voltages, exhibit excellent mechanical stability and have a maximum operating frequency in the order of 5 MHz.24:T4b8,2-Dimensional (2D) materials are attracting strong interest in printed electronics because of their unique properties and easy processability, enabling the fabrication of devices with low cost and mass scalable methods such as inkjet printing. For the fabrication of fully printed devices, it is of fundamental importance to develop a printable dielectric ink, providing good insulation and the ability to withstand large electric fields. Hexagonal boron nitride (h-BN) is typically used as a dielectric in printed devices. However, the h-BN film thickness is usually above 1 μm, hence limiting the use of h-BN in low-voltage applications. Furthermore, the h-BN ink is composed of nanosheets with broad lateral size and thickness distributions, due to the use of liquid-phase exfoliation (LPE). In this work, we investigate anatase TiO₂ nanosheets (TiO₂-NS), produced by a mass scalable bottom-up approach. We formulate the TiO₂-NS into a water-based and printable solvent and demonstrate the use of the material with sub-micron thickness in printed

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