Kye Okabe

Ternary content-addressable memory with MoS2 transistors for massively parallel data search

Rui Yang, Haitong Li, Kirby K. H. Smithe et al. · Nature Electronics · 2019 · 127 citations

Non-volatile Memory, Ternary Content-addressable Memory, Engineering +12

High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe₂

Michal J. Mleczko, Runjie Lily Xu, Kye Okabe et al. · ACS Nano · 2016 · 118 citations · Full text

Understanding the switching mechanism of interfacial phase change memory

Kye Okabe, Aditya Sood, Eilam Yalon et al. · Journal of Applied Physics · 2019 · 47 citations · Full text

Non-volatile Memory, Phase Transitions, Engineering +17

Ultrathin (∼2nm) HfO<inf>x</inf> as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration

Liang Zhao, Zizhen Jiang, Hongyu Chen et al. · 2014 · 21 citations

Engineering, Emerging Memory Technology, Semiconductor Device +17

2D molybdenum disulfide (MoS<inf>2</inf>) transistors driving RRAMs with 1T1R configuration

Rui Yang, Haitong Li, Kirby K. H. Smithe et al. · 2017 · 17 citations

Non-volatile Memory, Molybdenum Disulfide, Engineering +18