Kristina Gelžinytė

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

R. Aleksiejūnas, Kristina Gelžinytė, Saulius Nargelas et al. · Applied Physics Letters · 2014 · 35 citations

Wide-bandgap Semiconductor, Excitation-dependent Recombination Rate, Engineering +17

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

Kristina Gelžinytė, Ruslan Ivanov, S. Marcinkevičius et al. · Journal of Applied Physics · 2015 · 27 citations

Wide-bandgap Semiconductor, Engineering, Peak Wavelength Deviations +16

Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop

Daniel J. Myers, Kristina Gelžinytė, Abdullah I. Alhassan et al. · Physical review. B./Physical review. B · 2019 · 19 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

S. Marcinkevičius, Kristina Gelžinytė, Yuji Zhao et al. · Applied Physics Letters · 2014 · 18 citations

Engineering, Carrier Redistribution, Optoelectronic Devices +19

Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

Daniel J. Myers, Kristina Gelžinytė, Wan Ying Ho et al. · Journal of Applied Physics · 2018 · 12 citations · Full text

Wide-bandgap Semiconductor, Engineering, Energy Distribution +19