Bhawna Rawat

Single bit line accessed high‐performance ultra‐low voltage operating 7T static random access memory cell with improved read stability

Bhawna Rawat, Poornima Mittal · International Journal of Circuit Theory and Applications · 2021 · 42 citations

Non-volatile Memory, Engineering, Memory Design +18

A 32 nm single-ended single-port 7T static random access memory for low power utilization

Bhawna Rawat, Poornima Mittal · Semiconductor Science and Technology · 2021 · 34 citations

Complexing Eu³⁺/Tb³⁺ in a Nanoscale Postmodified Zr-MOF toward Temperature-Modulated Multispectrum Chromism

Sanchita Karmakar, Adrija Ghosh, Faruk Ahamed Rahimi et al. · ACS Applied Materials & Interfaces · 2022 · 23 citations

A Reliable and Temperature Variation Tolerant 7T SRAM Cell with Single Bitline Configuration for Low Voltage Application

Bhawna Rawat, Poornima Mittal · Circuits Systems and Signal Processing · 2022 · 19 citations

Low-power Electronics, Low Voltage Application, Electrical Engineering +8

A comprehensive analysis of different 7T SRAM topologies to design a 1R1 W bit interleaving enabled and half select free cell for 32 nm technology node

Bhawna Rawat, Poornima Mittal · Proceedings of the Royal Society A Mathematical Physical and Engineering Sciences · 2022 · 19 citations

Non-volatile Memory, Engineering, Vlsi Design +20