P.J. Roksnoer

Dislocation-free GaAs and InP crystals by isoelectronic doping

Guy Jacob, M. Duseaux, J. Farges et al. · Journal of Crystal Growth · 1983 · 154 citations

Engineering, Electrical Engineering, Materials Science +14

Microdefects in a non-striated distribution in floating-zone silicon crystals

P.J. Roksnoer, M.M.B. van den Boom · Journal of Crystal Growth · 1981 · 111 citations

Engineering, Materials Engineering, Materials Science +13

Effect of growth parameters on formation and elimination of vacancy clusters in dislocation-free silicon crystals

Anton Köck, P.J. Roksnoer, P.G.T. Boonen · Journal of Crystal Growth · 1974 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +16

A photoluminescence study of the donor structure in Al_xGa_1-xAs

J.C.M. Henning, J P M Amsems, P.J. Roksnoer · Semiconductor Science and Technology · 1988 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +10

The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensation

Anton Köck, P.J. Roksnoer, P.G.T. Boonen · Journal of Crystal Growth · 1975 · 45 citations

Natural Sciences, Materials Engineering, Materials Science +14