Bongkwon Son

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm

Hao Zhou, Shengqiang Xu, Yiding Lin et al. · Optics Express · 2020 · 102 citations · Full text

High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy

Yi‐Yu Zhang, Yixiong Zheng, Junyu Lai et al. · ACS Nano · 2021 · 72 citations · Full text

Wide-bandgap Semiconductor, Engineering, Unconventional Release Strategy +20

Dark current analysis of germanium-on-insulator vertical <i>p-i-n</i> photodetectors with varying threading dislocation density

Bongkwon Son, Yiding Lin, Kwang Hong Lee et al. · Journal of Applied Physics · 2020 · 58 citations · Full text

Semiconductors, Bulk Leakage, Electrical Engineering +14

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO_x surface passivation

Bongkwon Son, Yiding Lin, Kwang Hong Lee et al. · Optics Express · 2020 · 50 citations · Full text

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Soumava Ghosh, Kuan-Chih Lin, Cheng-Hsun Tsai et al. · Micromachines · 2020 · 39 citations · Full text

Engineering, Device Integration, Integrated Photonics +16