N. Bordes

Alpha-, boron-, silicon- and iron-ion-induced current transients in low-capacitance silicon and GaAs diodes

R. S. Wagner, N. Bordes, Jeffrey M. Bradley et al. · IEEE Transactions on Nuclear Science · 1988 · 62 citations · Full text

Engineering, Linear Energy Transfer, Ion Beam Instrumentation +19

Ion-beam induced disordering and onset of amorphization in spinel by defect accumulation

N. Bordes, L.M. Wang, Rodney C. Ewing et al. · Journal of materials research/Pratt's guide to venture capital sources · 1995 · 43 citations

Materials Science, Ion Implantation, Engineering +8

Transient Measurements of Ultrafast Charge Collection in Semicouductor Diodes

R. Steven Wagner, Jeffrey M. Bradley, N. Bordes et al. · IEEE Transactions on Nuclear Science · 1987 · 40 citations

Semiconductors, Device Modeling, Electrical Engineering +15

CMOS VLSI single event transient characterization

S.J. Heileman, W.R. Eisenstadt, R.M. Fox et al. · IEEE Transactions on Nuclear Science · 1989 · 28 citations

Engineering, Vlsi Design, Nuclear Physics +16

Irradiation-induced amorphization of AlPO4

A. N. Sreeram, L. W. Hobbs, N. Bordes et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 16 citations

Materials Science, Materials Engineering, Nuclear Ceramic +4