Jordan M. Smith - Concepedia

Author

Jordan M. Smith

University of California, Santa Barbara ORCID

Also Known As

Jordan M. Smith, Jordan Smith

Publications

685

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara Seoul Viosys (South Korea)

About

Jordan M. Smith is an author at University of California, Santa Barbara specializing in engineering, applied physics, and optoelectronic devices.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	485
2	Applied Physics	4	4	447
3	Electrical Engineering	3	3	209
4	Education	1	1	38
5	Culture	1	1	38

Jordan M. Smith

Publications

678

Citations

H-Index

Page 1

	Year	Citations
Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 <b> <i>μ</i> </b>m in diameter Jordan M. Smith, Ryan Ley, Matthew S. Wong, Applied Physics Letters EngineeringOptoelectronic DevicesIntegrated CircuitsGreen InganSemiconductor Nanostructures	2020	238
Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation Ryan Ley, Jordan M. Smith, Matthew S. Wong, Applied Physics Letters EngineeringSidewall DefectsOptoelectronic DevicesSemiconductorsLee Enhancements	2020	175
Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments Matthew S. Wong, Jared A. Kearns, Changmin Lee, Optics Express	2020	151
An assessment matrix for library makerspaces Aijuan Cun, Samuel Abramovich, Jordan M. Smith Library & Information Science Research Library ScienceEngineeringEducationSoftware EngineeringOpen-source Software Development	2019	38
Metasurface Light-Emitting Diodes with Directional and Focused Emission Yahya Mohtashami, Larry K. Heki, Matthew S. Wong, Nano Letters	2023	24
Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon Jacob Ewing, Cheyenne Lynsky, Jiaao Zhang, Crystals EngineeringLong-wavelength LedsSuperlattice StructureOptoelectronic DevicesSemiconductors	2022	20
Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective Panpan Li, Jacob Ewing, Matthew S. Wong, APL Materials	2024	18
Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer Vincent Rienzi, Jordan M. Smith, Norleakvisoth Lim, Crystals EngineeringOptoelectronic DevicesIntegrated CircuitsIii-nitride Red LedsSemiconductors	2022	14

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