G A Sapunov

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

Alexey D. Bolshakov, G A Sapunov, I. V. Shtrom et al. · Beilstein Journal of Nanotechnology · 2018 · 34 citations · Full text

Droplet epitaxy mediated growth of GaN nanostructures on Si (111) <i>via</i> plasma-assisted molecular beam epitaxy

Vladimir V. Fedorov, Alexey D. Bolshakov, Demid A. Kirilenko et al. · CrystEngComm · 2018 · 34 citations

Engineering, Gan Nanostructures, Droplet Epitaxy +17

Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si

Alexey D. Bolshakov, Vladimir V. Fedorov, K Yu Shugurov et al. · Nanotechnology · 2019 · 34 citations

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Vladimir V. Fedorov, Yury Berdnikov, N.V. Sibirev et al. · Nanomaterials · 2021 · 25 citations · Full text

Template-free Si Substrates, Nw Surface Density, Engineering +20

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Olga Yu. Koval, Vladimir V. Fedorov, Alexey D. Bolshakov et al. · Nanomaterials · 2020 · 24 citations · Full text

Engineering, Nanowire Array, Optoelectronic Devices +16