Quentin Durlin

Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

Quentin Durlin, Jean-Philippe Pérez, L. Cerutti et al. · Infrared Physics & Technology · 2018 · 37 citations

Si Substrate, Engineering, Physics +5

Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Manijeh Razeghi, Arash Dehzangi, Donghai Wu et al. · 2019 · 37 citations

Materials Science, Ii-vi Semiconductor, Transition Metal Chalcogenides +12

High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition

Donghai Wu, Quentin Durlin, Arash Dehzangi et al. · Applied Physics Letters · 2019 · 36 citations

Optical Materials, Engineering, Optoelectronic Devices +18

InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain

Quentin Durlin, Jean-Philippe Pérez, R. Rossignol et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2017 · 17 citations

New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector

Jean-Philippe Pérez, Quentin Durlin, C. Cervera et al. · 2018 · 10 citations · Full text

Photonics, Electrical Engineering, Engineering +6