Daniel V. McCaughan

Effects of nonradiative de-excitation of excited sputtered atoms near silicon and silicon dioxide surfaces

C. W. White, D.L. Simms, N. H. Tolk et al. · Surface Science · 1975 · 74 citations

Excited State Property, Localized Excited State, Engineering +12

Low Energy Ion Bombardment Effects in SiO2

Daniel V. McCaughan, V. T. Murphy · IEEE Transactions on Nuclear Science · 1972 · 35 citations

Sio2 Film, Ion Implantation, Impurity Ion Transport +11

Low-energy ion bombardment of silicon dioxide films on silicon

Daniel V. McCaughan, V. T. Murphy · Journal of Applied Physics · 1973 · 33 citations

Electrical Engineering, Ion Implantation, Engineering +13

Degradation of oxide films due to radiation effects in exposure to plasmas in sputter deposition and backsputtering

Daniel V. McCaughan, R.A. Kushner · Proceedings of the IEEE · 1974 · 27 citations

Engineering, Plasma Processing, Plasma Electronics +16

Effects of dislocations on the properties of metal SiO2-silicon capacitors

Daniel V. McCaughan, B. C. Wonsiewicz · Journal of Applied Physics · 1974 · 20 citations

Materials Engineering, Materials Science, Electrical Engineering +15