Satoshi Tanabe

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Active since

2009

Affiliations

Satoshi Tanabe is an author at Tokyo Institute of Technology specializing in hole transport, metal-oxide-semiconductor field-effect transistor modeling, and microelectronics.

Publications per year

2009–2009

Publications

Evaluation of Electron and Hole Mobility at Identical Metal–Oxide–Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Kiyohito Morii, Sanjeewa Dissanayake, Satoshi Tanabe et al. · Japanese Journal of Applied Physics · 2009 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

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