Sheng-Fu Yu

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Makoto Shiojiri, Ching‐Hsiang Chen, Sheng-Fu Yu et al. · Scientific Reports · 2015 · 62 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique

Jui-Fen Chien, Hua‐Yang Liao, Sheng-Fu Yu et al. · ACS Applied Materials & Interfaces · 2012 · 16 citations

Engineering, Materials Engineering, Materials Science +17

Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs

Sheng-Fu Yu, Ray‐Ming Lin, Shoou‐Jinn Chang et al. · Journal of Display Technology · 2012 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of quaternary AlInGaN with various TMI molar rates

Sheng-Fu Yu, Shoou‐Jinn Chang, Sheng-Po Chang et al. · Journal of Crystal Growth · 2010 · 14 citations

Natural Sciences, Chemistry, Geology +4

Characteristics of InGaN‐Based Light‐Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

Sheng-Fu Yu, Sheng-Po Chang, Shoou‐Jinn Chang et al. · Journal of Nanomaterials · 2012 · 11 citations · Full text

Engineering, Electrical Engineering, Materials Science +15