Karsten Beckmann

Nanoscale Hafnium Oxide RRAM Devices Exhibit Pulse Dependent Behavior and Multi-level Resistance Capability

Karsten Beckmann, Josh Holt, Harika Manem et al. · MRS Advances · 2016 · 72 citations

Materials Science, Electrical Engineering, Engineering +8

A practical hafnium-oxide memristor model suitable for circuit design and simulation

Sherif Amer, Sagarvarma Sayyaparaju, Garrett S. Rose et al. · 2017 · 52 citations

Device Modeling, Memristor Threshold, Electrical Engineering +15

Accurate Inference with Inaccurate RRAM Devices: Statistical Data, Model Transfer, and On-line Adaptation

Gouranga Charan, Jubin Hazra, Karsten Beckmann et al. · 2020 · 40 citations

Engineering, Machine Learning, Computer Architecture +22

Pulse width and height modulation for multi-level resistance in bi-layer TaO<i>x</i> based RRAM

Zahiruddin Alamgir, Karsten Beckmann, Joshua Holt et al. · Applied Physics Letters · 2017 · 36 citations

Non-volatile Memory, Pulse Width, Engineering +17

Performance Enhancement of a Time-Delay PUF Design by Utilizing Integrated Nanoscale ReRAM Devices

Karsten Beckmann, Harika Manem, Nathaniel C. Cady · IEEE Transactions on Emerging Topics in Computing · 2016 · 33 citations

Non-volatile Memory, Engineering, Vlsi Design +21