T.G. Digges

Origin of SiC Impurities in Silicon Crystals Grown from the Melt in Vacuum

F. Schmid, C. P. Khattak, T.G. Digges et al. · Journal of The Electrochemical Society · 1979 · 48 citations

Engineering, Sic Impurities, Carbon Level +18

Tensile properties of copper, nickel, and 70-percent-copper-30-percent-nickel and 30-percent-copper-70-percent-nickel alloys at high temperatures

William D. Jenkins, T.G. Digges, Carl R. Johnson · Journal of research of the National Bureau of Standards · 1957 · 41 citations · Full text

Bulk single crystal growth of silicon-germanium

Richard H. Deitch, Stephen H. Jones, T.G. Digges · Journal of Electronic Materials · 2000 · 27 citations

Materials Science, Engineering, Crystal Growth Technology +3

Creep of high-purity nickel

William D. Jenkins, T.G. Digges, Carl R. Johnson · Journal of research of the National Bureau of Standards · 1954 · 24 citations · Full text

Effect of temperature on the tensile properties of high-purity nickel

William D. Jenkins, T.G. Digges · Journal of research of the National Bureau of Standards · 1952 · 23 citations · Full text