I. Jenčič

Electron-beam-induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs

I. Jenčič, M. W. Bench, I.M. Robertson et al. · Journal of Applied Physics · 1995 · 201 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

Production of amorphous zones in GaAs by the direct impact of energetic heavy ions

M. W. Bench, I.M. Robertson, Mark A. Kirk et al. · Journal of Applied Physics · 2000 · 45 citations

Engineering, Amorphous Zones, Semiconductors +19

A comparison of the amorphization induced in Al<i>x</i>Ga1−<i>x</i>As and GaAs by heavy-ion irradiation

I. Jenčič, M. W. Bench, I.M. Robertson et al. · Journal of Applied Physics · 1991 · 45 citations

Semiconductors, Materials Science, Electrical Engineering +15

Low-energy electron beam induced regrowth of isolated amorphous zones in Si and Ge

I. Jenčič, I.M. Robertson · Journal of materials research/Pratt's guide to venture capital sources · 1996 · 37 citations

Ion Implantation, Engineering, Low-energy Electron Beam +8

Regrowth of amorphous regions in semiconductors by sub-threshold electron beams

I.M. Robertson, I. Jenčič · Journal of Nuclear Materials · 1996 · 24 citations

Semiconductors, Sub-threshold Electron Beams, Semiconductor Technology +6