Dominik Lausch

Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells

Volker Naumann, Dominik Lausch, Angelika Hähnel et al. · Solar Energy Materials and Solar Cells · 2013 · 322 citations

Na Decoration, Electrical Engineering, Engineering +4

Potential-Induced Degradation (PID): Introduction of a Novel Test Approach and Explanation of Increased Depletion Region Recombination

Dominik Lausch, Volker Naumann, Otwin Breitenstein et al. · IEEE Journal of Photovoltaics · 2014 · 141 citations

Engineering, Root Cause, Genetics +20

Understanding junction breakdown in multicrystalline solar cells

Otwin Breitenstein, Jan Bauer, Karsten Bothe et al. · Journal of Applied Physics · 2011 · 140 citations · Full text

Engineering, Photovoltaic System, Photovoltaics +17

Microstructural Analysis of Crystal Defects Leading to Potential-Induced Degradation (PID) of Si Solar Cells

Volker Naumann, Dominik Lausch, Stephan Großer et al. · Energy Procedia · 2013 · 110 citations · Full text

The role of stacking faults for the formation of shunts during potential‐induced degradation of crystalline Si solar cells

Volker Naumann, Dominik Lausch, Andreas Graff et al. · physica status solidi (RRL) - Rapid Research Letters · 2013 · 106 citations

Semiconductors, Materials Science, Electrical Engineering +11