C. J. Kao

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

Shoou‐Jinn Chang, Meng‐Lin Lee, Jinn‐Kong Sheu et al. · IEEE Electron Device Letters · 2003 · 94 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, Jinn‐Kong Sheu, Wei‐Chi Lai et al. · Applied Physics Letters · 2003 · 47 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +12

Planar GaN n+–p photodetectors formed by Si implantation into <i>p</i>-GaN

Jinn‐Kong Sheu, M. L. Lee, L. S. Yeh et al. · Applied Physics Letters · 2002 · 43 citations

Semiconductors, Photonics, Electrical Engineering +15

Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, Jinn‐Kong Sheu, Wei‐Chi Lai et al. · Journal of Applied Physics · 2003 · 40 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13

Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes

Hyuck Soo Yang, Sang Youn Han, Young-Woo Heo et al. · Japanese Journal of Applied Physics · 2005 · 38 citations

Materials Science, Electrical Engineering, Electronic Devices +15