R. Danielou

Possible configurational model for hydrogen in amorphous Si:H. An exodiffusion study

K. Zellama, P. Germain, S. Squelard et al. · Physical review. B, Condensed matter · 1981 · 106 citations

Engineering, Chemistry, Silicon On Insulator +17

Deuterium location and migration in metals: Comparison of implantation and solid solution

E. Ligeon, R. Danielou, J. Fontenille et al. · Journal of Applied Physics · 1986 · 58 citations

Engineering, Chemistry, Ion Implantation +20

Influence of hydrogen on optical properties of <i>a</i>-Si : H

J.C. Bruyère, A. Deneuville, Aarcha Appu Mini et al. · Journal of Applied Physics · 1980 · 49 citations

Optical Materials, Engineering, Si Target +17

Lattice location of deuterium in lutetium

R. Danielou, J. N. Daou, E. Ligeon et al. · physica status solidi (a) · 1981 · 34 citations

Materials Science, Position Du Deutérium, Engineering +12

Polarity determination in compound semiconductors by channeling: Application to heteroepitaxy

A.C. Chami, E. Ligeon, R. Danielou et al. · Applied Physics Letters · 1988 · 30 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +12