K. Jarašiūnas

Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free-carrier gratings

C. A. Hoffman, K. Jarašiūnas, H. J. Gerritsen et al. · Applied Physics Letters · 1978 · 162 citations

Engineering, Electrical Engineering, Optoelectronics +16

Carrier dynamics in bulk GaN

Patrik Šcˇajev, K. Jarašiūnas, Serdal Okur et al. · Journal of Applied Physics · 2012 · 86 citations

Engineering, Materials Engineering, Materials Science +17

Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature

Patrik Ščajev, V. Gudelis, K. Jarašiūnas et al. · Journal of Applied Physics · 2010 · 80 citations

Engineering, Materials Engineering, Materials Science +17

Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

R. Aleksiejūnas, M. Sūdžius, T. Malinauskas et al. · Applied Physics Letters · 2003 · 72 citations

Engineering, Materials Engineering, Materials Science +17

Ambipolar diffusion measurements in semiconductors using nonlinear transient gratings

K. Jarašiūnas, H. J. Gerritsen · Applied Physics Letters · 1978 · 66 citations

Engineering, Electrical Engineering, Materials Science +17