Massimo Nania

Effects of the Device Parameters and Circuit Mismatches on the Static and Dynamic Behavior of Parallel Connections of Silicon Carbide MOSFETs

A. Raciti, M. Melito, Massimo Nania et al. · 2018 · 29 citations

Advantage of the use of an added driver source lead in discrete Power MOSFETs

Cristiano Gianluca Stella, M. Laudani, A. Gaito et al. · 2014 · 26 citations

Electrical Engineering, Engineering, Power Device +11

Design Rules for Paralleling of Silicon Carbide Power MOSFETs

Salvatore La Mantia, Luigi Abbatelli, Carlo Brusca et al. · 2017 · 20 citations

Analysis of Transient Gate-Source OverVoltages in Silicon Carbide MOSFET Power Devices

Mario Pulvirenti, Gionatan Montoro, Massimo Nania et al. · 2018 · 19 citations

Sic Mosfet, Electrical Engineering, Semiconductor Device +9

Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters

Mario Pulvirenti, Angelo Giuseppe Sciacca, Luciano Salvo et al. · 2020 · 13 citations

Electrical Engineering, Engineering, Power Device +6