Hiroyuki Amishiro - Concepedia

Author

Hiroyuki Amishiro

Mitsubishi Electric (Japan)

Also Known As

H. AMISHIRO, H. Amishiro, Hiroyuki Amishiro

Publications

222

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)The University of Tokyo

About

Hiroyuki Amishiro is an author at Mitsubishi Electric (Japan) specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	163
2	Electrical Engineering	7	7	163
3	Applied Physics	5	5	124
4	Computer Engineering	2	2	39
5	Materials Science	1	1	15

Hiroyuki Amishiro

Publications

187

Citations

H-Index

Page 1

	Year	Citations
Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide Munetaka Noguchi, T. Iwamatsu, Hiroyuki Amishiro, Japanese Journal of Applied Physics SemiconductorsSic MosfetElectrical EngineeringSemiconductor TechnologyEngineering	2019	46
Determination of intrinsic phonon-limited mobility and carrier transport property extraction of 4H-SiC MOSFETs Munetaka Noguchi, T. Iwamatsu, Hiroyuki Amishiro, Sic MosfetSemiconductor TechnologyElectrical Engineering4H-sic MosfetsEngineering	2017	31
A 350-MS/s 3.3-V 8-bit CMOS D/A converter using a delayed driving scheme Hiroyuki Kohno, Yohei Nakamura, Akihiro Kondo, Electrical EngineeringEngineeringData ConverterMixed-signal Integrated CircuitDelayed Driving Scheme	2002	27
Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface Munetaka Noguchi, T. Iwamatsu, Hiroyuki Amishiro, Japanese Journal of Applied Physics	2020	24
Gate Oxide Instability and Lifetime in SiC MOSFETs under a Wide Range of Positive Electric Field Stress Munetaka Noguchi, Akihiro Koyama, T. Iwamatsu, Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringCrystalline Defects	2020	18
Hall effect mobility in inversion layer of 4H-SiC MOSFETs with a thermally grown gate oxide Munetaka Noguchi, T. Iwamatsu, Hiroyuki Amishiro, Japanese Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringElectronic Devices4H-sic Mosfets	2019	15
Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region Munetaka Noguchi, T. Iwamatsu, Hiroyuki Amishiro, Japanese Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringN DoseEngineeringSemiconductor Device	2018	14
Impact of well edge proximity effect on timing Toshiki Kanamoto, Yasuhiro Ogasahara, Keiko Natsume, Proceedings of ESSCIRC Digital Circuit DelayElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design	2007	12

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