J. P. Gailliard

The formation of waveguides and modulators in LiNbO3 by ion implantation

G. Destéfanis, J. P. Gailliard, E. Ligeon et al. · Journal of Applied Physics · 1979 · 175 citations

Photonics, Ion Implantation, Optical Materials +13

Optical waveguides in LiNbO3 formed by ion implantation of helium

G. Destéfanis, P. D. Townsend, J. P. Gailliard · Applied Physics Letters · 1978 · 86 citations

Photonics, Ion Implantation, Optical Materials +9

Very efficient void formation in ion implanted InSb

G. Destéfanis, J. P. Gailliard · Applied Physics Letters · 1980 · 69 citations

Materials Science, Electrical Engineering, Ion Implantation +14

Molecular‐beam epitaxy of Cd_<i>x</i>Hg_1−<i>x</i>Te at D.LETI/LIR

A. Million, L. Di Cioccio, J. P. Gailliard et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1988 · 52 citations

Semiconductors, Materials Science, Electrical Engineering +13

Relaxation of stresses in CdTe layers grown by molecular beam epitaxy

C. Fontaine, J. P. Gailliard, Serge Magli et al. · Applied Physics Letters · 1987 · 39 citations

Materials Science, Materials Engineering, Layer Thickness +13