We have successfully integrated a 2-stack 8×8 array 1D-1R(one diode-one resistor) structure with 0.5um×0.5um cells in order to demonstrate the feasibility of high density stacked RRAM. p-CuO X /n-InZnO X heterojunction thin film was used for the first time as a oxide diode which shows increased current density of two orders over our previous p-NiO x /n-TiO x oxide diode. And Ti-doped NiO was used for the storage node. No limitation to the number of stacks has been observed from our results. Cell and device properties of our cross-point structure 8×8 array are reported. In addition, all fabrication processes were done at room temperature without other dedicated facilities or processes allowing for compatibility with current CMOS technology. Bi-stable switching for 1D-1R memory was demonstrated for our 2-stack cross-point structures showing excellent behavior for both diode and storage nodes. The forward current density for p-CuO X /n-IZO X diodes was over 10 ⁴ A/cm ² , and the operation voltage for the storage node with diode attached was around 3V.

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