Mussaab I. Niass

Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in AlxGa1-xN waveguide

Sharif Muhammad Nawaz, Mussaab I. Niass, Yifu Wang et al. · Superlattices and Microstructures · 2020 · 32 citations

Materials Science, Alxga1-xn Waveguide, Electrical Engineering +7

p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode

Muhammad Nawaz Sharif, Mussaab I. Niass, Juin J. Liou et al. · Superlattices and Microstructures · 2021 · 30 citations

Electrical Engineering, P-alinn Electron, Engineering +5

Improve uniformity for an indoor visible light communication system

Mohammed S. M. Gismalla, M. F. L. Abdullah, Mussaab I. Niass et al. · International Journal of Communication Systems · 2020 · 25 citations

Free-space Optical Network, Wireless Communications, Engineering +8

Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer*

Yifu Wang, Mussaab I. Niass, Fang Wang et al. · Chinese Physics Letters · 2019 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electron Leakage +14

Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer

Muhammad Nawaz Sharif, Muhammad Usman, Mussaab I. Niass et al. · Nanotechnology · 2021 · 21 citations