Concepedia

Mengxiao Lian

ML

3

Publications

45

Citations

3

H-Index

2021

Active since

Affiliations

Shanghai Institute for Science of Science(Current)

South China Normal University

Mengxiao Lian is an author at Shanghai Institute for Science of Science specializing in applied physics, engineering, and electrical engineering.

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Publications per year

2021–2023

3

Publications

3

Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate

Jialin Li, Yian Yin, Ni Zeng et al. · Superlattices and Microstructures · 2021 · 22 citations

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2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate

Jialin Li, Yian Yin, Fengbo Liao et al. · Materials Science in Semiconductor Processing · 2022 · 12 citations

9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device

Mengxiao Lian, Yian Yin, Jialin Li et al. · Microelectronics Journal · 2023 · 11 citations

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