Asim Roy

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

Abubakkar Siddik, Prabir Kumar Haldar, Tufan Paul et al. · Nanoscale · 2021 · 104 citations

Engineering, Materials Engineering, Materials Science +16

Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI_3–<i>x</i>Cl_<i>x</i> Perovskite for RRAM Application

Ujjal Das, Dip Das, Bappi Paul et al. · ACS Applied Materials & Interfaces · 2020 · 78 citations

Natural Sciences, Materials Engineering, Materials Science +17

Incorporation of SnO₂ nanoparticles in PMMA for performance enhancement of a transparent organic resistive memory device

Pranab Kumar Sarkar, Snigdha Bhattacharjee, Manoj Prajapat et al. · RSC Advances · 2015 · 70 citations

Natural Sciences, Materials Engineering, Materials Science +16

Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device

Ujjal Das, Anupriya Nyayban, Bappi Paul et al. · ACS Applied Electronic Materials · 2020 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +17

Halide perovskite two-terminal analog memristor capable of photo-activated synaptic weight modulation for neuromorphic computing

Ujjal Das, Pranab Kumar Sarkar, Bappi Paul et al. · Applied Physics Letters · 2021 · 61 citations

Engineering, Electrical Engineering, Materials Science +16