Baochun Wu

Performance Limit of Gate-All-Around <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Si</mml:mi></mml:math> Nanowire Field-Effect Transistors: An <i>Ab Initio</i> Quantum Transport Simulation

Shiqi Liu, Qiuhui Li, Chen Yang et al. · Physical Review Applied · 2022 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Symmetric and Excellent Scaling Behavior in Ultrathin <i>n</i>‐ and <i>p</i>‐Type Gate‐All‐Around InAs Nanowire Transistors

Qiuhui Li, Chen Yang, Lin Xu et al. · Advanced Functional Materials · 2023 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Full electrical control of multiple resistance states in van der Waals sliding multiferroic tunnel junctions

Jie Yang, Baochun Wu, Jun Zhou et al. · Nanoscale · 2023 · 30 citations

Natural Sciences, Materials Science, Physics +14

Gate-tunable high magnetoresistance in monolayer Fe₃GeTe₂ spin valves

Jie Yang, Jie Yang, Ruge Quhe et al. · Physical Chemistry Chemical Physics · 2020 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +11

High‐Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe₂

Baochun Wu, Ruge Quhe, Jie Yang et al. · Advanced Theory and Simulations · 2020 · 25 citations

Natural Sciences, Materials Science, Physics +17