M. Ehinger

Influence of p-type doping on the degradation of ZnSe laser diodes

D. Albert, J. Nürnberger, V. Hock et al. · Applied Physics Letters · 1999 · 51 citations

P-type Doping, Optical Materials, Engineering +18

The growth start on the heterovalent GaAsZnSe interface under Te, Se and Zn termination

W. Spahn, H. Ress, K. Schüll et al. · Journal of Crystal Growth · 1996 · 23 citations

High quantum efficiency II–VI photodetectors for the blue and blue-violet spectral range

M. Ehinger, Christoph T. Koch, Maria das Graças Andrade Korn et al. · Applied Physics Letters · 1998 · 16 citations

Quantum Photonics, Engineering, Optoelectronic Devices +18

ZnSe-based MBE-grown photodiodes

A. Gerhard, J. Nürnberger, K. Schüll et al. · Journal of Crystal Growth · 1998 · 16 citations

Znse-based Mbe-grown Photodiodes, Electrical Engineering, Photoelectric Sensor +5

Termination, surface structure and morphology of the molecular beam epitaxially grown HgTe(001) surface

S. Oehling, M. Ehinger, T. Gerhard et al. · Applied Physics Letters · 1998 · 15 citations

Surface Structure, Engineering, Electron Diffraction +19