Tomas Kristijonas Uždavinys

Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy

Mounir Mensi, Ruslan Ivanov, Tomas Kristijonas Uždavinys et al. · ACS Photonics · 2017 · 33 citations

Wide-bandgap Semiconductor, Engineering, Microscopy +21

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

R. Butté, Lise Lahourcade, Tomas Kristijonas Uždavinys et al. · Applied Physics Letters · 2018 · 33 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +19

Photoexcited carrier trapping and recombination at Fe centers in GaN

Tomas Kristijonas Uždavinys, S. Marcinkevičius, Jacob H. Leach et al. · Journal of Applied Physics · 2016 · 28 citations

Semiconductors, Photonics, Wide-bandgap Semiconductor +13

Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy

S. Marcinkevičius, Tomas Kristijonas Uždavinys, Humberto M. Foronda et al. · Physical review. B./Physical review. B · 2016 · 24 citations · Full text

Wide-bandgap Semiconductor, Engineering, Bulk Gan +17

Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells

Ruslan Ivanov, S. Marcinkevičius, Tomas Kristijonas Uždavinys et al. · Applied Physics Letters · 2017 · 17 citations

Wide-bandgap Semiconductor, Engineering, Near-field Microscopy +16