Hyung-Woo Ahn - Concepedia

Author

Hyung-Woo Ahn

Korea Institute of Science and Technology

Also Known As

H.-W. Ahn, Hyung-Woo Ahn

Publications

323

Citations

H-Index

Concepts

All Affiliations

Korea Institute of Science and Technology Korea University Korea University of Science and Technology Korea Aerospace University Seoul National University

About

Hyung-Woo Ahn is an author at Korea Institute of Science and Technology specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	8	8	248
2	Engineering	7	7	201
3	Medicine	1	1	47
4	Social Sciences	1	1	47
5	Computer Engineering	1	1	39

Hyung-Woo Ahn

Publications

313

Citations

H-Index

Page 1

	Year	Citations
The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se Sang-Yeol Shin, Junhyuk Choi, Juhee Seo, Scientific Reports	2014	65
Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices S.-D. Kim, Hyung-Woo Ahn, Sang-Yeol Shin, ECS Solid State Letters Materials ScienceIi-vi SemiconductorElectrical EngineeringGexse1-x Chalcogenide GlassEngineering	2013	50
Relaxation oscillator-realized artificial electronic neurons, their responses, and noise Hyungkwang Lim, Hyung-Woo Ahn, Vladimir Kornijčuk, Nanoscale Synaptic TransmissionNeurotransmissionNeurochipSocial SciencesNeurodynamics	2016	47
A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt Hyung-Woo Ahn, Dong Seop Jeong, Byung‐ki Cheong, ECS Solid State Letters EngineeringSemiconductor MaterialsOptoelectronic DevicesSilicon On InsulatorSemiconductor Device	2013	39
A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5 Suyoun Lee, Doo Seok Jeong, Jeung-hyun Jeong, Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringNanoelectronicsThreshold Switching	2010	37
Anomalous reduction of the switching voltage of Bi-doped Ge<sub>0.5</sub>Se<sub>0.5</sub> ovonic threshold switching devices Juhee Seo, Hyung-Woo Ahn, Sang-Yeol Shin, Applied Physics Letters EngineeringSilicon On InsulatorSemiconductor DeviceElectronic DevicesAnomalous Reduction	2014	27
Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature Zhe Wu, Suyoun Lee, Young‐Wook Park, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2010	20
A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS) Juhee Seo, Seong Won Cho, Hyung-Woo Ahn, Journal of Alloys and Compounds Electrical EngineeringEngineeringOvonic Threshold SwitchElectrode-electrolyte InterfaceSurface Science	2016	18
Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials Jeung-hyun Jeong, Hyung-Woo Ahn, Suyoun Lee, Applied Physics Letters Materials EngineeringMaterials ScienceMaterial AnalysisWeaker AdhesionEngineering	2009	10

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