Concepedia

P. Madejczyk

PM

27

Publications

584

Citations

17

H-Index

2004

Active since

Affiliations

Military University of Technology in Warsaw(Current)

Vigo System (Poland)

University of New Mexico

Wrocław University of Science and Technology

P. Madejczyk is an author at Military University of Technology in Warsaw specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringOptoelectronicsSemiconductorsElectronic DevicesOptoelectronic DevicesPhysicsMaterial ScienceMicroelectronics

Publications per year

2004–2023

27

Publications

27

Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors

A. Piotrowski, P. Madejczyk, Waldemar Gawron et al. · Infrared Physics & Technology · 2006 · 62 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +7

High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

M. Kopytko, A. Kębłowski, Waldemar Gawron et al. · Opto-Electronics Review · 2013 · 44 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Performance modeling of MWIR InAs/GaSb/B–Al<sub>0.2</sub>Ga<sub>0.8</sub>Sb type-II superlattice nBn detector

Piotr Martyniuk, Jarosław Wróbel, E. Plis et al. · Semiconductor Science and Technology · 2012 · 41 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

MOCVD growth of Hg₁₋xCdxTe heterostructures for uncooled infrared photodetectors

A. Piotrowski, P. Madejczyk, Waldemar Gawron et al. · Opto-Electronics Review · 2004 · 28 citations

Engineering, Mocvd Growth, Applied Physics +4

MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors

P. Madejczyk, Waldemar Gawron, Piotr Martyniuk et al. · Semiconductor Science and Technology · 2013 · 27 citations

Wide-bandgap Semiconductor, Engineering, Arsenic Doping +17

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