Faguang Yan - Concepedia

Concepedia

Author

Faguang Yan

Institute of Semiconductors ORCID

Also Known As

F Q Yan, F. Yan, Fa-Guang Yan, Faguang Yan, Yan, Faguang

45

Publications

2.5K

Citations

23

H-Index

59

Concepts

All Affiliations

Institute of Semiconductors Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing Academy of Quantum Information Sciences University of Nottingham

FY

About

Faguang Yan is an author at Institute of Semiconductors specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	15	1.5K
2	Applied Physics	14	15	1.5K
3	Natural Sciences	4	4	169
4	Chemical Engineering	2	2	237
5	Social Sciences	1	1	64

Faguang Yan

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28

Publications

2.5K

Citations

23

H-Index

	Year	Citations
High‐Performance, Self‐Driven Photodetector Based on Graphene Sandwiched GaSe/WS<sub>2</sub> Heterojunction Quanshan Lv, Faguang Yan, Xia Wei, Advanced Optical Materials Optical MaterialsEngineeringOptoelectronic DevicesSemiconductorsGraphene Nanomeshes	2017	234
Fast, multicolor photodetection with graphene-contacted <i>p</i>-GaSe/<i>n</i>-InSe van der Waals heterostructures Faguang Yan, Lixia Zhao, A. Patanè, Nanotechnology EngineeringDirect Band GapOptoelectronic DevicesElectronic PropertiesSemiconductors	2017	225
Gate Tuning of High‐Performance InSe‐Based Photodetectors Using Graphene Electrodes Wengang Luo, Yufei Cao, PingAn Hu, Advanced Optical Materials Optical MaterialsEngineeringResponse SpeedOptoelectronic DevicesGate Tuning	2015	204
Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods Faguang Yan, Zhongming Wei, Xia Wei, Small Methods Optical MaterialsEngineeringTwo-dimensional MaterialsOptoelectronic DevicesSemiconductors	2018	170
Spin-Valve Effect in Fe<sub>3</sub>GeTe<sub>2</sub>/MoS<sub>2</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructures Hailong Lin, Faguang Yan, Ce Hu, ACS Applied Materials & Interfaces	2020	157
Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions Wenkai Zhu, Shihong Xie, Hailong Lin, Chinese Physics Letters EngineeringEmerging Memory TechnologyVdw MtjsSpintronic MaterialMagnetoresistance	2022	150
Fast gate-tunable photodetection in the graphene sandwiched WSe<sub>2</sub>/GaSe heterojunctions Xia Wei, Faguang Yan, Quanshan Lv, Nanoscale	2017	140
High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN Lei Liu, Chao Yang, A. Patanè, Nanoscale	2017	138
Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions Wenkai Zhu, Hailong Lin, Faguang Yan, Advanced Materials	2021	127
Charge trap memory based on few-layer black phosphorus Qi Feng, Faguang Yan, Wengang Luo, Nanoscale	2015	105

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