L. Joulaud - Concepedia

Author

L. Joulaud

Centre National de la Recherche Scientifique

Also Known As

Joulaud, Laurent, L. Joulaud, Laurent Joulaud

Publications

416

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Saint-Gobain (France)Université Paris-Saclay Université Paris-Sud Chimie ParisTech

About

L. Joulaud is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	407
2	Applied Physics	7	7	365
3	Electrical Engineering	4	4	110
4	Materials Science	4	4	226
5	Chemistry	1	1	146

L. Joulaud

Publications

407

Citations

H-Index

Page 1

	Year	Citations
Well-Aligned ZnO Nanowire Arrays Prepared by Seed-Layer-Free Electrodeposition and Their Cassie−Wenzel Transition after Hydrophobization Thierry Pauporté, G. Bataille, L. Joulaud, The Journal of Physical Chemistry C EngineeringTheir Cassie−wenzel TransitionNanostructured SurfaceSurface NanotechnologyChemistry	2009	146
Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55μm N. Chimot, J. Mangeney, L. Joulaud, Applied Physics Letters Thz PhotonicsTerahertz TechnologyEngineeringIrradiation DoseCarrier Lifetime	2005	99
Evanescently coupled photodiodes integrating a double-stage taper for 40-gb/applications-compared performance with side-illuminated photodiodes S. Demiguel, L. Giraudet, L. Joulaud, Journal of Lightwave Technology Dstp DevicesSide-illuminated PhotodiodesOptical MaterialsEngineeringDouble-stage Taper	2002	42
Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime L. Joulaud, J. Mangeney, J.-M. Lourtioz, Applied Physics Letters Materials ScienceIon ImplantationPoint DefectsEngineeringCrystalline Defects	2003	31
Field emission behavior of vertically aligned ZnO nanowire planar cathodes V. Semet, Vu Thien Binh, Thierry Pauporté, Journal of Applied Physics Materials ScienceFunctional NanomaterialsElectrical EngineeringEngineeringNanoengineering	2011	28
Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm J. Mangeney, L. Joulaud, P. Crozat, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceOptical Transmission SystemLaser Applications	2003	26
Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots Charles Cornet, M. Hayne, Philippe Caroff, Physical Review B Categoryquantum ElectronicsEngineeringCharge-carrier Redistribution EfficiencyColloidal NanocrystalsOptoelectronic Devices	2006	21
Conduction mechanisms in ion-irradiated InGaAs layers L. Joulaud, J. Mangeney, N. Chimot, Journal of Applied Physics EngineeringIrradiation DoseBand GapSemiconductorsIon Implantation	2005	14

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