V. P. Ulin - Concepedia

Author

V. P. Ulin

Also Known As

Ulin, V. P., Ulin, V.P., Ulin, Vladimir, V P Ulin, V. P. Ulin, V. Ulin, V.P Ulin, V.P. Ulin, Vladimir P. Ulin, Vladimir Ulin

113

Publications

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Russian Academy of Sciences Ioffe Institute École Polytechnique Centre National de la Recherche Scientifique

About

V. P. Ulin is an author at Physico-Technical Institute specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	14	427
2	Applied Physics	11	13	414
3	Chemistry	9	9	259
4	Chemical Engineering	4	4	99
5	Natural Sciences	1	1	13

V. P. Ulin

Publications

816

Citations

H-Index

Page 1

	Year	Citations
Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 × 10^6 Biswarup Guha, Félix Marsault, Fabian Cadiz, Optica Optical MaterialsEngineeringOptoelectronic DevicesSemiconductorsOptical Properties	2017	112
Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density P. A. Alekseev, M. S. Dunaevskiy, V. P. Ulin, Nano Letters EngineeringOptoelectronic DevicesChemistrySurface NitridationNw Conductivity	2014	87
Porous silicon and its applications in biology and medicine O. I. Ksenofontova, Andrey V. Vasin, Egorov Vv, Technical Physics	2014	61
Wet chemical nitridation of GaAs (100) by hydrazine solution for surface passivation V. L. Berkovits, V. P. Ulin, María Losurdo, Applied Physics Letters Wide-bandgap SemiconductorEngineeringHomogeneous Gan LayerElectronic PassivationChemistry	2002	49
Electrochemical pore formation mechanism in III–V crystals (Part II) V. P. Ulin, S. G. Konnikov Semiconductors	2007	33
Electrochemical pore formation mechanism in III–V crystals (Part I) V. P. Ulin, S. G. Konnikov Semiconductors	2007	32
Chemical and photochemical processes in sulfide passivation of GaAs(100): <i>In situ</i> optical study and photoemission analysis V. L. Berkovits, V. P. Ulin, D. Paget, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Optical MaterialsEngineeringSemiconductor Surface PassivationSemiconductor MaterialsOptoelectronic Devices	1998	27
Soft nitridation of GaAs(100) by hydrazine sulfide solutions: Effect on surface recombination and surface barrier V. L. Berkovits, D. Paget, A. N. Karpenko, Applied Physics Letters SemiconductorsMaterials ScienceSurface Fermi LevelWide-bandgap SemiconductorEngineering	2007	27
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism V. P. Ulin, N. V. Ulin, F. Yu. Soldatenkov Semiconductors	2017	22
Epitaxial growth on silicon and characterization of MnF2 and ZnF2 layers with metastable orthorhombic structure A. G. Banshchikov, V. P. Ulin, N. S. Sokolov Journal of Applied Physics EngineeringCrystal Growth TechnologyMnf2 LayersChemistryIi-vi Semiconductor	2005	20

Page 1