V. P. Ulin

Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 × 10^6

Biswarup Guha, Félix Marsault, Fabian Cadiz et al. · Optica · 2017 · 112 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +17

Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density

P. A. Alekseev, M. S. Dunaevskiy, V. P. Ulin et al. · Nano Letters · 2014 · 87 citations

Engineering, Optoelectronic Devices, Chemistry +18

Porous silicon and its applications in biology and medicine

O. I. Ksenofontova, Andrey V. Vasin, Egorov Vv et al. · Technical Physics · 2014 · 61 citations

Wet chemical nitridation of GaAs (100) by hydrazine solution for surface passivation

V. L. Berkovits, V. P. Ulin, María Losurdo et al. · Applied Physics Letters · 2002 · 49 citations

Wide-bandgap Semiconductor, Engineering, Homogeneous Gan Layer +17

Electrochemical pore formation mechanism in III–V crystals (Part II)

V. P. Ulin, S. G. Konnikov · Semiconductors · 2007 · 33 citations