Guoyi Tao

InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes

Shengjun Zhou, Zehong Wan, Yu Lei et al. · Optics Letters · 2022 · 116 citations

High efficiency electron-blocking-layer-free deep ultraviolet LEDs with graded Al-content AlGaN insertion layer

Lang Shi, Peng Du, Guoyi Tao et al. · Superlattices and Microstructures · 2021 · 25 citations

Materials Science, Aluminium Nitride, Electrical Engineering +7

Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes

Guoyi Tao, Xiaoyu Zhao, Shengjun Zhou · Optics Letters · 2021 · 18 citations

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure

Xiaoyu Zhao, Zehong Wan, Liyan Gong et al. · Nanomaterials · 2021 · 18 citations · Full text

Engineering, Luminescence Property, Light-emitting Diodes +16

InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes.

Sheng‐Jun Zhou, Zehong Wan, Lei Yu et al. · PubMed · 2022 · 12 citations