V. S. Stolbunov

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov et al. · Applied Physics Letters · 2018 · 99 citations

Engineering, Materials Engineering, Materials Science +17

To: Materials Science in Semiconductor Processing

L. A. Aslanov, Vladimir B. Zaytsev, V. N. Zakharov et al. · SSRN Electronic Journal · 2023 · 87 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Annealing of radiation-induced defects in tungsten: Positron annihilation spectroscopy study

O.V. Ogorodnikova, L.Yu. Dubov, S. V. Stepanov et al. · Journal of Nuclear Materials · 2019 · 44 citations

Natural Sciences, Materials Science, Physics +14

Use of MeV energy ion accelerators to simulate the neutron damage in fusion reactor materials

N. P. Bobyr, Т. V. Kulevoy, P. Fedin et al. · Fusion Engineering and Design · 2019 · 22 citations

Natural Sciences, Nuclear Engineering, Physics +16

Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3

A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov et al. · Journal of Applied Physics · 2021 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +17