L.M. Gaggero‐Sager

A simple model for delta-doped field-effect transistor electronic states

L.M. Gaggero‐Sager, R. Pérez‐Álvarez · Journal of Applied Physics · 1995 · 55 citations

Device Modeling, Delta-doped Field-effect Transistor, Electrical Engineering +11

Design of graphene electronic devices using nanoribbons of different widths

Gerardo G. Naumis, Mauricio Terrones, Humberto Terrones et al. · Applied Physics Letters · 2009 · 43 citations

Electrical Resistance, Nanosheet, Graphene Electronic Devices +16

Thomas-Fermi approximation in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type δ-doped quantum wells of GaAs and Si

L.M. Gaggero‐Sager, M.E. Mora‐Ramos, D. A. Contreras‐Solorio · Physical review. B, Condensed matter · 1998 · 39 citations

Semiconductors, Quantum Science, Thomas-fermi Approximation +13

Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells

I. Rodrı́guez-Vargas, L.M. Gaggero‐Sager, V.R. Velasco · Surface Science · 2003 · 35 citations

Semiconductors, Quantum Science, Hole Gas +8

The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs

Outmane Oubram, O. Navarro, L.M. Gaggero‐Sager et al. · Solid State Sciences · 2012 · 31 citations

Semiconductors, Quantum Science, Semiconductor Technology +10