A. Arranz

Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: a factor analysis study of the Ta 4 f XPS core level

A. Arranz, C. Palacio · Applied Physics A · 2005 · 71 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +8

Influence of Surface Hydroxylation on 3-Aminopropyltriethoxysilane Growth Mode during Chemical Functionalization of GaN Surfaces: An Angle-Resolved X-ray Photoelectron Spectroscopy Study

A. Arranz, C. Palacio, David García‐Fresnadillo et al. · Langmuir · 2008 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +17

Synthesis of hafnium nitride films by 0.5–5 keV nitrogen implantation of metallic Hf: an X-ray photoelectron spectroscopy and factor analysis study

A. Arranz · Surface Science · 2004 · 55 citations

Natural Sciences, Materials Engineering, Materials Science +11

Screening effects in the Ti 2p core level spectra of Ti-based ternary nitrides

A. Arranz, C. Palacio · Surface Science · 2006 · 39 citations

Natural Sciences, Materials Science, Physics +10

Characterization of the surface and interface species formed during the oxidation of aluminum

A. Arranz, C. Palacio · Surface Science · 1996 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +12