Concepedia

G. Bougnot

GB

18

Publications

408

Citations

13

H-Index

1970

Active since

Affiliations

Institut d'Électronique et des Systèmes(Current)

Centre National de la Recherche Scientifique

Université de Montpellier

G. Bougnot is an author at Institut d'Électronique et des Systèmes specializing in engineering, applied physics, and materials science.

Top concepts

Publications per year

1970–1995

18

Publications

18

Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes

G. Bougnot, F. Delannoy, A. Foucaran et al. · Journal of The Electrochemical Society · 1988 · 41 citations

Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide

F. Pascal, F. Delannoy, J. Bougnot et al. · Journal of Electronic Materials · 1990 · 40 citations

, , +2

Liquid phase epitaxy of silicon at very low temperatures

Baptiste Girault, F. Chevrier, A. Joullié et al. · Journal of Crystal Growth · 1977 · 40 citations

, , +4

Liquid-phase-epitaxial growth of Ga0.96Al0.04Sb: Electrical and photoelectrical characterizations

H. Luquet, L. Gouskov, M. Pérotin et al. · Journal of Applied Physics · 1986 · 40 citations

, , +19

Growth of Ga1−xAlxSb and Ga1−xInxSb by organometallic chemical vapor deposition

G. Bougnot, A. Foucaran, M. Marjan et al. · Journal of Crystal Growth · 1986 · 32 citations

, , +7

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