Christian Brylinski

SiO 2 / 6H-SiC (0001)3×3 initial interface formation by Si overlayer oxidation

Fabrice Amy, P. Soukiassian, Y. Hwu et al. · Applied Physics Letters · 1999 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer

O. Noblanc, C. Arnodo, C. Dua et al. · Materials science forum · 2000 · 40 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

TEM study of Ni and Ni2Si ohmic contacts to SiC

B. Pécz, G. Radnóczi, S. Cassette et al. · Diamond and Related Materials · 1997 · 38 citations

Engineering, Materials Engineering, Materials Science +13

Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature

C. Duquenne, M. A. Djouadi, Pierre‐Yves Tessier et al. · Applied Physics Letters · 2008 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

Jonathan Faugier-Tovar, Florica Lazar, Catherine Marichy et al. · Condensed Matter · 2017 · 23 citations · Full text

Engineering, Materials Engineering, Materials Science +17