M. Mastromatteo

N-type doping of Ge by As implantation and excimer laser annealing

Ruggero Milazzo, E. Napolitani, G. Impellizzeri et al. · Journal of Applied Physics · 2014 · 58 citations

Engineering, Laser Applications, Laser Material +17

Mechanism of B diffusion in crystalline Ge under proton irradiation

E. Bruno, S. Mirabella, G. G. Scapellato et al. · Physical Review B · 2009 · 41 citations

Materials Science, B Diffusion, Ion Implantation +11

Thermodynamic stability of high phosphorus concentration in silicon nanostructures

Michele Perego, Gabriele Seguini, Elisa Arduca et al. · Nanoscale · 2015 · 36 citations · Full text

Materials Science, Dopant Source, Engineering +14

Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

E. Napolitani, G. Bisognin, E. Bruno et al. · Applied Physics Letters · 2010 · 33 citations

Materials Science, Ion Implantation, Impurity Diffusion +13

Synthesis and characterization of P<i>δ</i>-layer in SiO₂by monolayer doping

Elisa Arduca, M. Mastromatteo, D. De Salvador et al. · Nanotechnology · 2016 · 28 citations

Engineering, Chemistry, Silicon On Insulator +16