J. Wojkowski

Long-wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)

J. D. Kim, Donghai Wu, J. Wojkowski et al. · Applied Physics Letters · 1996 · 73 citations

Engineering, Electrical Engineering, Materials Science +17

8–13 μm InAsSb heterojunction photodiode operating at near room temperature

J. D. Kim, S. Kim, Donghai Wu et al. · Applied Physics Letters · 1995 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Very long wavelength infrared type-II detectors operating at 80 K

Hooman Mohseni, A. Tahraoui, J. Wojkowski et al. · Applied Physics Letters · 2000 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

Hooman Mohseni, J. Wojkowski, Manijeh Razeghi et al. · IEEE Journal of Quantum Electronics · 1999 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

High carrier lifetime InSb grown on GaAs substrates

E. Michel, Hooman Mohseni, J. D. Kim et al. · Applied Physics Letters · 1997 · 18 citations

Engineering, Materials Engineering, Materials Science +17