K. Hofmann

Statistics

Publications

Citations

202

H-Index

Active since

1984

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

Karlsruhe Institute of Technology

K. Hofmann is an author at IBM Research - Thomas J. Watson Research Center specializing in materials engineering, materials science, and silicon materials.

ORCID

Publications per year

1984–2025

Publications

Defect formation in thermal SiO2 by high-temperature annealing

K. Hofmann, Gary W. Rubloff, R. A. McCorkle · Applied Physics Letters · 1986 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +17

Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)

K. Hofmann, Gary W. Rubloff, Donald R. Young · Journal of Applied Physics · 1987 · 33 citations

Engineering, Materials Engineering, Materials Science +17

Hole trapping in SiO2 films annealed in low-pressure oxygen atmosphere

K. Hofmann, Donald R. Young, Gary W. Rubloff · Journal of Applied Physics · 1987 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +16

Effect of mechanical properties on processing behavior and electrochemical performance of aqueous processed graphite anodes for lithium-ion batteries

K. Hofmann, Akshay Dattatraya Hegde, Xinyang Liu‐Théato et al. · Journal of Power Sources · 2023 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +15

High temperature reaction and defect chemistry at the Si/SiO2 interface

K. Hofmann, Gary W. Rubloff, M. Liehr et al. · Applied Surface Science · 1987 · 21 citations

Engineering, Materials Engineering, Materials Science +16

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