Jang Won Oh

<i>In situ</i> TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge₂Sb₂Te₅

Sang Ho Oh, Kyungjoon Baek, Sung Kyu Son et al. · Nanoscale Advances · 2020 · 37 citations · Full text

Natural Sciences, Materials Science, Physics +17

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Kyungjoon Baek, Kyung Song, Sung Kyu Son et al. · NPG Asia Materials · 2015 · 23 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Wan Gee Kim, Min Gyu Sung, Sook Joo Kim et al. · 2010 · 19 citations

Engineering, Materials Engineering, Materials Science +17

Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Wan Gee Kim, Min Gyu Sung, Sook Joo Kim et al. · Journal of The Electrochemical Society · 2011 · 12 citations

Engineering, Materials Engineering, Materials Science +17